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| Freescale Semiconductor Technical Data Document Number: MRF18030B Rev. 7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 - 1990 MHz. * Typical GSM Performance: Power Gain - 14 dB (Typ) @ 30 Watts Efficiency - 50% (Typ) @ 30 Watts * Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 Watts CW Output Power Features * Internally Matched for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Excellent Thermal Stability * Low Gold Plating Thickness on Leads, 40 Nominal. * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 32 mm,13 inch Reel. MRF18030BLR3 MRF18030BLSR3 1930- 1990 MHz, 30 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 1 NI - 400 MRF18030BLR3 CASE 465F - 04, STYLE 1 NI - 400S MRF18030BLSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 83.3 0.48 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 2.1 Unit C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) (c) Freescale Semiconductor, Inc., 2006. All rights reserved. MRF18030BLR3 MRF18030BLSR3 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25C, 50 ohm system unless otherwise noted) Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 Adc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture) (2) Output Power, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 250 mA, f = 1930 - 1990 MHz) Common- Source Amplifier Power Gain @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1930 - 1990 MHz) Drain Efficiency @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1930 - 1990 MHz) Input Return Loss @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1930 - 1990 MHz) 1. Part internally matched both on input and output. 2. Device specifications obtained on a Production Test Fixture. P1dB Gps IRL 27 13 46.5 -- 30 14 50 - 12 -- -- -- -9 W dB % dB Crss -- 1.3 -- pF VGS(th) VGS(Q) VDS(on) gfs 2 2 -- -- 3 3.9 0.29 2 4 4.5 0.4 -- Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 1 1 Vdc Adc Adc Symbol Min Typ Max Unit MRF18030BLR3 MRF18030BLSR3 2 RF Device Data Freescale Semiconductor VGG R2 R3 C7 R1 C8 Z9 C4 + VDD C9 RF INPUT Z4 Z1 C1 Z2 C2 Z3 DUT Z5 Z6 C3 Z7 C6 Z8 RF OUTPUT C5 C1 C2 C3 C4, C5 C6, C7, C8 C9 R1 R2, R3 Z1 1.8 pF, 100B Chip Capacitor 0.8 pF, 100B Chip Capacitor 0.8 pF, 100B Chip Capacitor 1.2 pF, 100B Chip Capacitors 8.2 pF, 100B Chip Capacitors 220 mF, 63 V Electrolytic Capacitor 1.0 k, 1/8 W Chip Resistor (0805) 10 k, 1/8 W Chip Resistors (0805) 0.496 x 0.087 Microstrip Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 1.022 x 0.087 Microstrip 0.257 x 0.633 Microstrip 0.189 x 0.394 Microstrip 0.335 x 0.394 Microstrip 0.616 x 0.087 Microstrip 0.845 x 0.087 Microstrip 0.366 x 0.087 Microstrip 0.500 x 0.087 Microstrip Figure 1. 1930 - 1990 MHz Test Fixture Schematic VBIAS R2 R3 C7 C1 C2 CUTOUT AREA C5 C3 R1 C8 C4 C9 VSUPPLY C6 Ground (bias) MRF18030B Ground (supply) Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 1930 - 1990 MHz Test Fixture Component Layout MRF18030BLR3 MRF18030BLSR3 RF Device Data Freescale Semiconductor 3 TYPICAL CHARACTERISTICS 16 15 G ps , POWER GAIN (dB) 14 13 12 11 10 1850 VDD = 26 Vdc IDQ = 250 mA T = 25_C 1900 Gps @ 15 W Gps @ 30 W 0 Pout , OUTPUT POWER (WATTS) IRL, INPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 2050 40 35 30 25 20 15 10 5 0 1880 1900 1920 1940 1960 1980 2000 2020 0.5 W VDD = 26 Vdc IDQ = 250 mA T = 25_C Pin = 2 W 1W IRL @ 30 W IRL @ 15 W 0.25 W 1950 f, FREQUENCY (MHz) 2000 f, FREQUENCY (MHz) Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power Figure 4. Output Power versus Frequency 16 15 G ps , POWER GAIN (dB) 14 13 12 11 10 IDQ = 400 mA G ps , POWER GAIN (dB) 300 mA 200 mA 15 14 13 12 11 10 9 100 0.1 VDD = 26 Vdc IDQ = 250 mA f = 1960 MHz 1 10 100 Pout, OUTPUT POWER (WATTS) T = 25_C 55_C 85_C 100 mA VDD = 26 Vdc f = 1960 MHz T = 25_C 0.1 1 10 Pout, OUTPUT POWER (WATTS) Figure 5. Power Gain versus Output Power Figure 6. Power Gain versus Output Power 15 14 G ps , POWER GAIN (dB) 13 12 11 IDQ = 250 mA f = 1960 MHz T = 25_C 1 10 Pout, OUTPUT POWER (WATTS) 16 15 G ps , POWER GAIN (dB) 14 13 12 h 11 10 100 0.1 1 VDD = 26 Vdc IDQ = 250 mA f = 1960 MHz T = 25_C 10 Gps 60 50 40 30 20 10 0 100 , DRAIN EFFICIENCY (%) 30 V 28 V 26 V VDD = 22 V 24 V 10 Pout, OUTPUT POWER (WATTS) Figure 7. Power Gain versus Output Power Figure 8. Power Gain and Efficiency versus Output Power MRF18030BLR3 MRF18030BLSR3 4 RF Device Data Freescale Semiconductor Zo = 25 f = 2110 MHz Zload f = 1710 MHz f = 2110 MHz f = 1710 MHz Zsource VDD = 26 V, IDQ = 250 mA, Pout = 30 W (CW) f MHz 1710 1785 1805 1840 1880 1960 1990 2110 Zsource 2.92 - j8.24 3.84 - j9.75 4.15 - j10.38 4.04 - j10.22 6.12 - j12.29 6.20 - j12.29 8.61 - j12.10 15.19 - j11.85 Zload 4.18 - j9.06 4.59 - j9.46 4.98 - j9.06 6.10 - j7.63 5.83 - j6.89 5.55 - j6.33 5.93 - j6.66 3.82 - j5.33 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF18030BLR3 MRF18030BLSR3 RF Device Data Freescale Semiconductor 5 NOTES MRF18030BLR3 MRF18030BLSR3 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X G SEE NOTE 4 1 2X K 2 2X D bbb N (LID) ccc M M Q M bbb B 3 TB M A M B NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. INFORMATION ONLY: CORNER BREAK (4X) TO BE .060.005 (1.520.13) RADIUS OR .06.005 (1.520.13) x 45 CHAMFER. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .004 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.10 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 3.05 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC TA M B M TA M B E M ccc C M TA M B M R (LID) F aaa M TA A M B M M (INSULATOR) A T SEATING PLANE S (INSULATOR) aaa M H B M TA M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465E - 04 ISSUE F NI - 400 MRF18030BLR3 2X D bbb M T A 1 M B M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .004 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.10 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF 2 2X K ccc E M TA M B M R C 3 (LID) N ccc M TA M B M (LID) F A (FLANGE) A T M SEATING PLANE H S (INSULATOR) aaa (FLANGE) M TA M B M (INSULATOR) aaa M TA M B M B B STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465F - 04 ISSUE E NI - 400S MRF18030BLSR3 MRF18030BLR3 MRF18030BLSR3 RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006. All rights reserved. MRF18030BLR3 MRF18030BLSR3 8Rev. 7, 5/2006 Document Number: MRF18030B RF Device Data Freescale Semiconductor |
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